| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1SS293 | Schottky barrier diode for low voltage high speed switching | Toshiba | - | 3 | -55°C | 125°C | 111 K |
| 1SS294 | Schottky barrier diode for low voltage high speed switching | Toshiba | - | 3 | -55°C | 125°C | 114 K |
| 1SS295 | Schottky barrier diode for UHF band mixer applications | Toshiba | - | 3 | -55°C | 125°C | 109 K |
| BSS295 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 78 K |
| BSS296 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 76 K |
| BSS297 | N-channel SIPMOS small-signal transistor | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 75 K |
| SS29 | 2.0 Ampere Schottky Barrier Rectifiers | Fairchild-Semiconductor | - | - | - | - | 41 K |
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