| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| STB50NE08 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 95 K |
| STB50NE10 | N-CHANNEL 100V - 0.021 OHM - 50A - D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| STB50NE10L | N-CHANNEL 100V - 0.020 OHM - 50A - D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 51 K |
| STB55NE06 | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 98 K |
| STB55NE06L | N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 55 K |
| STB55NF03L | N-CHANNEL 30V - 0.01 OHM - 55A D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 81 K |
| STB5600 | GPS RF FRONT-END IC | SGS-Thomson-Microelectronics | - | - | - | - | 72 K |
| STB5NA50 | N-CHANNEL ENHANCEMENT FAST MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 126 K |
| STB5NA80 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 131 K |
| STB5NB60 | N-CHANNEL 600V - 1.8 OHM - 5A - I2PAK/D2PAK POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 93 K |
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