| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PSTD82/08 | 800 V three phase rectifier bridge | distributor | - | 5 | -40°C | 150°C | 75 K |
| PSTD82/12 | 1200 V three phase rectifier bridge | distributor | - | 5 | -40°C | 150°C | 75 K |
| PSTD82/14 | 1400 V three phase rectifier bridge | distributor | - | 5 | -40°C | 150°C | 75 K |
| PSTD82/16 | 1600 V three phase rectifier bridge | distributor | - | 5 | -40°C | 150°C | 75 K |
| PSTD82/18 | 1800 V three phase rectifier bridge | distributor | - | 5 | -40°C | 150°C | 75 K |
| STD83003 | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 299 K |
| STD8N06 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 171 K |
| STD8N10L | Power dissipation 45 W Transistor polarity N Channel Current Id cont. 8 A Current Idm pulse 32 A Voltage Vgs th max. 2.5 V Voltage Vds max 100 V Resistance Rds on 0.33 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 381 K |
| STD8N10L | Power dissipation 45 W Transistor polarity N Channel Current Id cont. 8 A Current Idm pulse 32 A Voltage Vgs th max. 2.5 V Voltage Vds max 100 V Resistance Rds on 0.33 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 381 K |
| STD8NS25 | N-CHANNEL 250V 0.38 OHM 8A DPAK MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 122 K |
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