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STP4na

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
STP4NA100N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSGS-Thomson-Microelectronics----77 K
STP4NA40N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----198 K
STP4NA40FIN-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----198 K
STP4NA60N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----203 K
STP4NA60FIN-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----203 K
STP4NA60FPN-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSGS-Thomson-Microelectronics----50 K
STP4NA80N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----201 K
STP4NA80FIN-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORSSGS-Thomson-Microelectronics----201 K
STP4NA90Power dissipation 100 W Transistor polarity N Channel Current Id cont. 3.5 A Current Idm pulse 14 A Voltage Vgs th max. 3.75 V Voltage Vds max 900 V Resistance Rds on 4 R Temperature power 25 ?CSGS-Thomson-Microelectronics----236 K
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