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STP55

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
STP55NE06N-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSGS-Thomson-Microelectronics----120 K
STP55NE06LN-CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFETSGS-Thomson-Microelectronics----57 K
STP55NF03LPower dissipation 80 W Transistor polarity N Channel Current Id cont. 55 A Current Idm pulse 220 A Voltage Vgs th max. 2.5 V Pitch lead 2.54 mm Voltage Vds max 30 V Resistance Rds on 0.013 RSGS-Thomson-Microelectronics----85 K
STP55NF06N-CHANNEL 60V - 0.017 OHM - 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----485 K
STP55NF06FPN-CHANNEL 60V - 0.017 OHM - 50A TO-220/TO-220FP/I2PAK STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----485 K
STP55NF06LN-CHANNEL 60V - 0.014 OHM - 55A T0-220/TO-22OFP/D2PAK/I2PAK STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----454 K
STP55NF06LFPN-CHANNEL 60V - 0.014 OHM - 55A T0-220/TO-22OFP/D2PAK/I2PAK STRIPFET II POWER MOSFETSGS-Thomson-Microelectronics----454 K
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