| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AT-259 | DC-2 GHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOT | 4 | -40°C | 85°C | 112 K |
| AT-259TR | DC-2 GHz, voltage variable absorptive attenuator | M-A-COM---manufacturer-of-RF | SOT | 4 | -40°C | 85°C | 112 K |
| GS816018T-250 | 5.5ns 250MHz 1M x 18 18Mb synchronous burst SRAM | distributor | TQFP | 100 | 0°C | 70°C | 785 K |
| PEEL16CV8T-25 | 25ns CMOS programmable electrically erasable logic device | distributor | TSSOP | 20 | 0°C | 70°C | 173 K |
| PEEL18CV8T-25 | 25ns CMOS programmable electrically erasable logic device | distributor | TSSOP | 20 | 0°C | 70°C | 397 K |
| PEEL18CV8ZT-25 | 25ns CMOS programmable electrically erasable logic device | distributor | TSSOP | 20 | 0°C | 70°C | 242 K |
| PEEL18LV8ZT-25 | 35ns CMOS programmable electrically erasable logic device | distributor | TSSOP | 20 | 0°C | 70°C | 113 K |
| PEEL22CV10AT-25 | 25ns CMOS programmable electrically erasable logic device | distributor | TSSOP | 20 | 0°C | 70°C | 247 K |
| PEEL22CV10AZT-25 | 25ns CMOS programmable electrically erasable logic device | distributor | TSSOP | 24 | 0°C | 70°C | 381 K |
| PEEL22LV10AZT-25 | CMOS programmable electrically erasable logic device, 25ns | distributor | TSSOP | 24 | 0°C | 70°C | 135 K |
| << [6] [7] [8] [9] [10] 11 [12] [13] [14] [15] [16] >> |
|---|
