| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1N30N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 144 K |
| HGT1N40N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 152 K |
| IXTT1N100 | 1000V high voltage MOSFET | distributor | - | 3 | -55°C | 150°C | 73 K |
| MMFT1N10E | Medium power field effect transistor | Motorola | - | 4 | -65°C | 150°C | 236 K |
| PHT1N52S | 520 V, power MOS transistor | Philips-Semiconductors | SOT | 4 | - | - | 27 K |
| STT1NF100 | N-CHANNEL 100 V - 0.7 OHM - 1 A SOT23-6L STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 97 K |
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