Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1T412 | Variable Capacitance Diode | Sony-Semiconductor | - | - | - | - | 59 K |
MMBT4124 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 93 K |
MMBT4126 | PNP General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 94 K |
PVT412 | HEXFET power MOSFET photovoltaic relay | International-Rectifier | DIP | 6 | -40°C | 85°C | 299 K |
PVT412L | HEXFET power MOSFET photovoltaic relay | International-Rectifier | DIP | 6 | -40°C | 85°C | 299 K |
PVT412LS | HEXFET power MOSFET photovoltaic relay | International-Rectifier | DIP | 6 | -40°C | 85°C | 299 K |
PVT412S | HEXFET power MOSFET photovoltaic relay | International-Rectifier | DIP | 6 | -40°C | 85°C | 299 K |
PVT412S-T | HEXFET power MOSFET photovoltaic relay | International-Rectifier | DIP | 6 | -40°C | 85°C | 299 K |
SMBT4124 | NPN silicon switching transistor | Infineon-formely-Siemens | - | 3 | - | - | 97 K |
SMBT4126 | PNP silicon switching transistor | Infineon-formely-Siemens | - | 3 | - | - | 96 K |
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