Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
CTB-24 | Schottky Barrier diode | Sanken-Electric-Co- | - | - | - | - | 32 K |
CTB-24L | Schottky Barrier diode | Sanken-Electric-Co- | - | - | - | - | 32 K |
MC33169DTB-2.5 | GaAs power amplifier support IC | Motorola | TSSOP | 14 | -40°C | 85°C | 206 K |
QM15TB-2H | 15A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 78 K |
QM15TB-2HB | 15A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 79 K |
QM30TB-24 | 30A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 75 K |
QM30TB-24B | 30A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 88 K |
QM30TB-2H | 30A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 78 K |
QM30TB-2H | 30A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 78 K |
QM30TB-2HB | 30A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 78 K |
1 [2] |
---|