Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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K6T4008U1C-TB10 | 512Kx8 bit low voltage CMOS static RAM, Vcc range=2.7-3.3V, 100ns, LL-power | Samsung-Electronic | - | 32 | 0°C | 70°C | 186 K |
STB100NF03L-03 | N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 393 K |
STB100NF03L-03-1 | N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 393 K |
STB100NF04 | N-CHANNEL 40V 0.0043 OHM 120A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 584 K |
STB100NF04-1 | N-CHANNEL 40V 0.0043 OHM 120A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 584 K |
STB100NF04L | N-CHANNEL 40V 0.0036 OHM 100A D2PAK STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 338 K |
STB100NH02L | N-CHANNEL 24V - 0.0052 OHM - 60A D2PAK STRIPFET III POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 405 K |
STB10NK60Z | N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 684 K |
STB10NK60Z-1 | N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 684 K |
STB10NK60Z-1 | N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 684 K |
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