| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BTB112-800TW | 12A TRIACS | SGS-Thomson-Microelectronics | - | - | - | - | 109 K |
| KTB1124 | Switching Transistor | Korea-Electronics-Co--Ltd- | - | - | - | - | 88 K |
| PDTB114ET | 50 V,PNP resistor-eguipped transistor | Philips-Semiconductors | SOT | 3 | -65°C | 150°C | 50 K |
| STB11NK40Z | N-CHANNEL 400V 0.49 OHM 9A TO-220/TO-220FP/D2PAK ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 579 K |
| STB11NM60 | N-CHANNEL 600V - 0.4 OHM - 11A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 548 K |
| STB11NM60-1 | N-CHANNEL 600V - 0.4 OHM - 11A TO-220/TO-220FP/D2PAK/I2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 548 K |
| STB11NM60A-1 | N-CHANNEL 600V 0.4 OHM 11A TO-220/TO-220FP/I2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 367 K |
| STB11NM80 | N-CHANNEL 800 V - 0.35 OHM - 11 A TO-220/D2PAK MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 381 K |
| TB1100H | 90V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 184 K |
| TB1100M | 90V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junction | distributor | SMB | 2 | -40°C | 150°C | 187 K |
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