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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB23P06ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C280 K
MTB23P06VTMOS V power field effect transistorMotorolaDPAK4-55°C175°C249 K
PTB23006UMicrowave power transistorPhilips-SemiconductorsSOT440---88 K
PTB23006U40 V, microwave power transistorPhilips-SemiconductorsSOT3--75 K
TB2300H190V; 100A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junctiondistributorSMB2-40°C150°C184 K
TB2300HRated repetitive off-state voltage:190 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C46 K
TB2300L190V; 30A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junctiondistributorSMB2-40°C150°C190 K
TB2300LRated repetitive off-state voltage:190 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C47 K
TB2300M190V; 50A Bi-directional surface mount thyristor surge protective device. Oxide-glass passivated junctiondistributorSMB2-40°C150°C187 K
TB2300MRated repetitive off-state voltage:190 ,surface mount thyristor surge protective devicedistributorSMB2-40°C150°C47 K
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