| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| STB60NF06 | N-CHANNEL 60V 0.014 OHM 60A D2PAK STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 425 K |
| STB60NF06L | N-CHANNEL 60V - 0.014 OHM - 60A D2PAK/TO-220 STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 472 K |
| STB60NH02L | N-CHANNEL 24V - 0.0085 OHM - 60A D2PAK STRIPFET III POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 423 K |
| STB6LNC60 | N-CHANNEL 600V 1 OHM 5.8A D2PAK POWERMESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 422 K |
| STB6LNC60 | N-CHANNEL 600V 1 OHM 5.8A D2PAK POWERMESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 422 K |
| STB6NC60-1 | N-CHANNEL 600V 1.0 OHM - 6A - TO-220/TO220FP/I2PAK POWER MESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 364 K |
| VTB6061CIE | Process photodiode. Sp = 120 nA/fc at H = 1.0fc, Sp = 11nA/lux at H = 1.0 lux. | distributor | - | 2 | -54°C | 50°C | 30 K |
| VTB6061J | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 2 | -40°C | 110°C | 33 K |
| VTB6061UV | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 3 | -40°C | 110°C | 33 K |
| VTB6061UVJ | Process photodiode. Isc = 350 microA, Voc = 490 mV at H = 100 fc, 2850 K. | distributor | - | 3 | -40°C | 110°C | 32 K |
| [1] [2] [3] [4] [5] 6 [7] |
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