| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28C256ATC-4 | High speed CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28C64ATC-4 | High speed CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | 0°C | 70°C | 42 K |
| 28LV256TC-4 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28LV64TC-4 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 250 ns. | distributor | TSOP | 28 | 0°C | 70°C | 42 K |
| K4E640812B-TC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4E660812B-TC-45 | 8M x 8bit CMOS dynamic RAM with extended data out, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 416 K |
| K4F640811B-TC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F660811B-TC-45 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| RTC-4513 | Serial-interface real time clock module | Seiko-Epson-Corporation | SO | 14 | -40°C | 85°C | 45 K |
| RTC-4553 | Serial-interface real time clock module with SRAM | Seiko-Epson-Corporation | SO | 14 | -30°C | 70°C | 111 K |
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