| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 28LV256TC-6 | Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28LV256TC-6 | Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns. | distributor | TSOP | 28 | 0°C | 70°C | 41 K |
| 28LV64TC-6 | Speed: 400 ns, Low voltage CMOS 64 K electrically erasable programmable ROM 8K x 8 BIT EEPROM | distributor | TSOP | 28 | 0°C | 70°C | 42 K |
| 28LV64TC-6 | Low voltage CMOS. 64K electrically erasable programmable ROM. 8K x 8 bit EEPROM. Access time 400 ns. | distributor | TSOP | 28 | 0°C | 70°C | 42 K |
| HY57V161610DTC-6 | 2 banks x 512K x 16 bit synchronous DRAM, LVTTL interface, 166MHz | distributor | TSOP II | 50 | 0°C | 70°C | 130 K |
| HY57V161610DTC-6I | 2 banks x 524,288 x 16 synchronous DRAM, LVTTL interface, 166 MHz | distributor | TSOP II | 50 | -40°C | 85°C | 73 K |
| HY57V651620BLTC-6 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 166MHz, low power | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
| HY57V651620BTC-6 | Synchronous DRAM organized 4 Banks x 1M x 16Bit, LVTT Linterface, 3.3V, 166MHz | distributor | TSOP II | 54 | 0°C | 70°C | 81 K |
| K4F640811B-TC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
| K4F660811B-TC-60 | 8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 32 | 0°C | 70°C | 367 K |
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