Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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TC1014-3.0VCT | 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1014-3.3VCT | 50mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1014-5.0VCT | 50mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1015-2.5VCT | 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1015-2.7VCT | 100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1015-3.0VCT | 100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0 V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1015-3.3VCT | 100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3 V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1015-5.0VCT | 100mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0 V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 109 K |
TC1054-2.5VCT | 50mA CMOS LDO with shutdown and error output (it can be used as a low battery detector, or processor reset generator). Output voltage 2.5 V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 123 K |
TC1054-2.7VCT | 50mA CMOS LDO with shutdown and error output (it can be used as a low battery detector, or processor reset generator). Output voltage 2.7 V. | TelCom-Semiconductor-Inc- | - | 5 | -40°C | 125°C | 123 K |
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