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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
TC1015-1.8VCT100mA CMOS LDOs with shutdown and reference bypass, output voltages: 1.8VMicrochip-Technology-Inc--5-40°C125°C558 K
TC1015-2.5VCT100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.5V.TelCom-Semiconductor-Inc--5-40°C125°C109 K
TC1015-2.7VCT100mA CMOS LDO with shutdown and reference bypass. Output voltage 2.7V.TelCom-Semiconductor-Inc--5-40°C125°C109 K
TC1015-2.85VCT100mA CMOS LDOs with shutdown and reference bypass, output voltages: 2.85VMicrochip-Technology-Inc--5-40°C125°C558 K
TC1015-3.0VCT100mA CMOS LDOs with shutdown and reference bypass, output voltages: 3.0VMicrochip-Technology-Inc--5-40°C125°C558 K
TC1015-3.0VCT100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.0 V.TelCom-Semiconductor-Inc--5-40°C125°C109 K
TC1015-3.3VCT100mA CMOS LDOs with shutdown and reference bypass, output voltages: 3.3VMicrochip-Technology-Inc--5-40°C125°C558 K
TC1015-3.3VCT100mA CMOS LDOs with shutdown and reference bypass, output voltages: 3.3VMicrochip-Technology-Inc--5-40°C125°C558 K
TC1015-3.3VCT100mA CMOS LDO with shutdown and reference bypass. Output voltage 3.3 V.TelCom-Semiconductor-Inc--5-40°C125°C109 K
TC1015-5.0VCT100mA CMOS LDO with shutdown and reference bypass. Output voltage 5.0 V.TelCom-Semiconductor-Inc--5-40°C125°C109 K
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