Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGTD6N40E1 | 6A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 32 K |
HGTD6N40E1S | 6A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 32 K |
HGTD6N50E1 | 6A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 32 K |
HGTD6N50E1S | 6A, 400V and 500V N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 32 K |
KTD600K | NPN transistor for low frequency power amplifier medium speed switching applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 274 K |
KTD686 | NPN transistor for switching applications, hammer drive and pulse motor drive applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 307 K |
STD616A-1 | HIGH VOLTAGE NPN POWER TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 42 K |
STD6N10 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 171 K |
TD62C853F | 8 bit serial-in parallel-out shift register/latch drives | Toshiba | - | 24 | -40°C | 85°C | 381 K |
TD62C854F | 8 bit serial-in parallel-out shift register/latch drives | Toshiba | - | 24 | -40°C | 85°C | 381 K |
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