| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTD6000PT | Photo transistor. Peak sensitivity wavelength 880 nm. | distributor | Metal Can | 2 | -25°C | 100°C | 183 K |
| MTD658E | 5/8 port 10/100 hub build_in bridge and memory | distributor | PQFP | 128 | -40°C | 125°C | 518 K |
| MTD6N10E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 211 K |
| MTD6N20E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 269 K |
| MTD6P10E | TMOS E-FET power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 261 K |
| TD62503F | 7 single driver | Toshiba | SOP | 16 | -40°C | 85°C | 339 K |
| TD62504F | 7 single driver | Toshiba | SOP | 16 | -40°C | 85°C | 339 K |
| TD62504F | 7 single driver | Toshiba | SOP | 16 | -40°C | 85°C | 339 K |
| TD62930F | Three phase small signal IGBT gate driver | Toshiba | - | 16 | -20°C | 85°C | 325 K |
| TD62930P | Three phase small signal IGBT gate driver | Toshiba | - | 16 | -20°C | 85°C | 325 K |
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