| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTD7N60A4S | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
| HGTD7N60B3S | 14A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 92 K |
| HGTD7N60C3S | 14A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 144 K |
| KTD718 | NPN transistor for high power amplifier applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 277 K |
| MBM29DL161TD70PBT | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | Fujitsu-Microelectronis | plastic FBGA | 48 | -20°C | 70°C | 1 M |
| MBM29DL161TD70PFTN | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | Fujitsu-Microelectronis | - | 48 | -20°C | 70°C | 1 M |
| MBM29DL161TD70PFTR | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | Fujitsu-Microelectronis | - | 48 | -20°C | 70°C | 1 M |
| MBM29DL162TD70PFTN | Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation | Fujitsu-Microelectronis | - | 48 | -20°C | 70°C | 1 M |
| STD7NB20 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 96 K |
| STD7NS20 | N-CHANNEL 200V - 0.35 OHM - 7A - DPAK MESH OVERLAY MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 53 K |
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