Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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LTE21009R | NPN microwave power transistor | Philips-Semiconductors | SOT440 | - | - | - | 55 K |
STE24NA100 | N-CHANNEL 1000V - 0.35 OHM - 24A - ISOTOP FAST POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
STE26NA90 | N-CHANNEL 900V - 0.25 OHM - 26A - ISOTOP FAST POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 92 K |
TNETE2004PAC | 10 BASE-T QUAD PHYSICAL LAYER DEVICE WITH MDIO | Texas-Instruments | PAC | 128 | - | - | 723 K |
TNETE2004PBE | 10 BASE-T QUAD PHYSICAL LAYER DEVICE WITH MDIO | Texas-Instruments | PBE | 120 | - | - | 723 K |
TNETE2004PGJ | 10 BASE-T QUAD PHYSICAL LAYER DEVICE WITH MDIO | Texas-Instruments | PGJ | 128 | - | - | 723 K |
TNETE2201APHD | 1.25-GIGABIT ETHERNET TRANSCEIVER | Texas-Instruments | PHD | 64 | 0°C | 70°C | 254 K |
TNETE2201APJD | 1.25-GIGABIT ETHERNET TRANSCEIVER | Texas-Instruments | PJD | 64 | 0°C | 70°C | 254 K |
TNETE2201BPHD | 1.25-GIGABIT ETHERNET TRANSCEIVER | Texas-Instruments | PHD | 64 | 0°C | 70°C | 256 K |
TNETE2201BPJD | 1.25-GIGABIT ETHERNET TRANSCEIVER | Texas-Instruments | PJD | 64 | 0°C | 70°C | 256 K |
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