| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| KM416C1000BTL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416C1000CTL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP II | 44 | 0°C | 70°C | 767 K |
| KM416C1200BTL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 60ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416C1204CTL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416C254DTL-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=5.0V, 60ns, self-refresh | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
| KM416V1000BTL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416V1004CTL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416V1200BTL-6 | 1M x 16Bit CMOS dynamic RAM with fast page mode, 3.3V, 60ns | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 84 K |
| KM416V1204CTL-60 | 1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refresh | Samsung-Electronic | TSOP | 44 | 0°C | 70°C | 804 K |
| KM416V254DTL-6 | 256K x 16Bit CMOS dynamic RAM with extended data out, Vcc=3.3V, 60ns, self-refresh | Samsung-Electronic | TSOP II | 40 | 0°C | 70°C | 840 K |
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