| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FMMTL618 | NPN silicon planar high gain medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 64 K |
| FMMTL618 | NPN silicon planar high gain medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 64 K |
| FMMTL619 | NPN silicon planar high gain medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 65 K |
| FMMTL619 | NPN silicon planar high gain medium power transistor | Zetex-Semiconductor | SOT | 3 | -55°C | 150°C | 65 K |
| K4S641632F-TL60 | CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interface | Samsung-Electronic | TSOP II | 54 | 0°C | 70°C | 133 K |
| K4S643232C-TL60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 1 M |
| K4S643232E-TL60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232F-TL60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 101 K |
| STL6NK55Z | N-CHANNEL 550V - 1.2OHM - 5.2A POWERFLAT(5X5) ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 215 K |
| STL6NK55Z | N-CHANNEL 550V - 1.2OHM - 5.2A POWERFLAT(5X5) ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 215 K |
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