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TL60

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4E641612B-TL604M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low powerSamsung-ElectronicTSOP II500°C70°C885 K
K4E641612C-TL604M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low powerSamsung-ElectronicTSOP II500°C70°C884 K
K4E661612B-TL604M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low powerSamsung-ElectronicTSOP II500°C70°C885 K
K4E661612C-TL604M x 16bit CMOS dynamic RAM with extended data out, 3.3V power supply, 60ns, low powerSamsung-ElectronicTSOP II500°C70°C884 K
K4F641612B-TL604M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low powerSamsung-ElectronicTSOP II500°C70°C844 K
K4F661612B-TL604M x 16bit CMOS dynamic RAM with fast page mode, 3.3V power supply, 60ns, low powerSamsung-ElectronicTSOP II500°C70°C844 K
K4S641632F-TL60CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S643232C-TL60512K x 32bit x 4 banks synchronous DRAM LVTTL, 166MHzSamsung-ElectronicTSOP II860°C70°C1 M
K4S643232E-TL60512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHzSamsung-ElectronicTSOP II860°C70°C102 K
K4S643232F-TL60512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHzSamsung-ElectronicTSOP II860°C70°C101 K
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