| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 217 K |
| MTP10N10E | TMOS IV power field effect transistor | Motorola | - | 4 | -65°C | 150°C | 237 K |
| MTP10N10EL | Logic level TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 221 K |
| MTP10N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 249 K |
| MTP10N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 249 K |
| STP100NF03L-03 | N-CHANNEL 30V - 0.0026 OHM -100A D2PAK/I2PAK/TO-220 STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 393 K |
| STP100NF04 | N-CHANNEL 40V 0.0043 OHM 120A TO-220/D2PAK/I2PAK STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 584 K |
| STP100NF04L | N-CHANNEL 40V 0.0036 OHM 100A TO-220 STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 268 K |
| VTP100 | Process photodiodes | distributor | - | 2 | -40°C | 100°C | 25 K |
| VTP100C | Process photodiodes | distributor | - | 2 | -40°C | 100°C | 26 K |
| VTP1012 | Process photodiodes | distributor | - | 2 | -40°C | 110°C | 26 K |
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