| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP3N60A4 | 600V, SMPS Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 189 K |
| HGTP3N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 156 K |
| HGTP3N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 130 K |
| HGTP3N60B3 | 7A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 141 K |
| HGTP3N60B3D | 7A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 154 K |
| HGTP3N60C3 | 6A, 600V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 243 K |
| HGTP3N60C3D | TRANSISTOR IGBT TO-220 | Fairchild-Semiconductor | - | - | - | - | 327 K |
| MTP3N60 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 200 K |
| MTP3N60E | TMOS E-FET high energy power FET | Motorola | - | 4 | -55°C | 150°C | 183 K |
| MTP3N60FI | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 200 K |
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