| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTP40N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 160 K |
| MTP4N40E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 239 K |
| MTP4N50E | TMOS E-FET high energy power FET | Motorola | - | 4 | -55°C | 150°C | 254 K |
| MTP4N80E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 159 K |
| STP40NF10L | N-CHANNEL 100V 0.028 OHM 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 258 K |
| STP40NF10L | N-CHANNEL 100V 0.028 OHM 40A TO-220 LOW GATE CHARGE STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 258 K |
| STP4NA90 | Power dissipation 100 W Transistor polarity N Channel Current Id cont. 3.5 A Current Idm pulse 14 A Voltage Vgs th max. 3.75 V Voltage Vds max 900 V Resistance Rds on 4 R Temperature power 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 236 K |
| STP4NB80 | N-CHANNEL 800V - 3 OHM - 4A - TO-220/TO-220FP POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 106 K |
| STP4NB80 | N-CHANNEL 800V - 3 OHM - 4A - TO-220/TO-220FP POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 106 K |
| STP4NB80FP | N-CHANNEL 800V - 3 OHM - 4A - TO-220/TO-220FP POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 106 K |
| VTP4085 | Process photodiodes | distributor | - | 2 | -20°C | 75°C | 31 K |
| VTP4085S | Process photodiodes | distributor | - | 2 | -20°C | 75°C | 31 K |
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