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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTP60N05HDLHDTMOS E-FET power field effect transistorMotorola-4-55°C175°C166 K
MTP6N60ETMOS E-FET power field effect transistorMotorola-4-55°C150°C156 K
MTP6P20ETMOS E-FET power field effect transistorMotorola-4-55°C150°C216 K
STP6N50Power dissipation 100 W Transistor polarity N Channel Current Id cont. 6 A Current Idm pulse 24 A Pitch lead 2.54 mm Voltage Vds max 500 V Resistance Rds on 1.1 R Temperature current 25 ?CSGS-Thomson-Microelectronics----201 K
STP6NB90FPN-CHANNEL 900V - 1.7 OHM - 5.8A - TO-220/TO-220FP POWERMESH MOSFETSGS-Thomson-Microelectronics----109 K
TP60PSilicon photovoltaic cellInfineon-formely-Siemens-2-40°C80°C162 K
TP62601Microwave power oscillator transistorMotorola-3--88 K
TP6311QG1/8-1/16 duty VFD controller/driver.distributorQFP52-40°C85°C441 K
TP6312FE1/4-Te1/11-duty FIP(VFD) controller/driver.distributorLQFP44-40°C85°C317 K
VTP6060Process photodiodesdistributor-2-40°C110°C30 K
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