Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MTP60N05HDL | HDTMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 175°C | 166 K |
MTP6N60E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 156 K |
MTP6P20E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 216 K |
STP6N50 | Power dissipation 100 W Transistor polarity N Channel Current Id cont. 6 A Current Idm pulse 24 A Pitch lead 2.54 mm Voltage Vds max 500 V Resistance Rds on 1.1 R Temperature current 25 ?C | SGS-Thomson-Microelectronics | - | - | - | - | 201 K |
STP6NB90FP | N-CHANNEL 900V - 1.7 OHM - 5.8A - TO-220/TO-220FP POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 109 K |
TP60P | Silicon photovoltaic cell | Infineon-formely-Siemens | - | 2 | -40°C | 80°C | 162 K |
TP62601 | Microwave power oscillator transistor | Motorola | - | 3 | - | - | 88 K |
TP6311QG | 1/8-1/16 duty VFD controller/driver. | distributor | QFP | 52 | -40°C | 85°C | 441 K |
TP6312FE | 1/4-Te1/11-duty FIP(VFD) controller/driver. | distributor | LQFP | 44 | -40°C | 85°C | 317 K |
VTP6060 | Process photodiodes | distributor | - | 2 | -40°C | 110°C | 30 K |
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