| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT | Fairchild-Semiconductor | - | - | - | - | 204 K |
| HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 143 K |
| HGTP7N60C3D | 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes | Fairchild-Semiconductor | - | - | - | - | 311 K |
| K4S643232E-TP70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | -45°C | 85°C | 100 K |
| K4S643232F-TP70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | -40°C | 85°C | 99 K |
| STP75NF75 | N-CHANNEL 75V - 0.0095 OHM - 80A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 473 K |
| STP75NF75FP | N-CHANNEL 75V - 0.0095 OHM - 80A TO-220/TO-220FP/D2PAK STRIPFET II POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 473 K |
| STP7NB60KD | N-CHANNEL 7A - 600V TO-220/TO-220FP/D2PAK POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 351 K |
| STP7NC40 | N-CHANNEL 400V 0.75 OHM 6A TO-220 POWERMESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 244 K |
| STP7NC70Z | N-CHANNEL 700V - 1.1 OHM - 6A TO-220/FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 529 K |
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