Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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ACTS10MS | Radiation Hardened Triple Three-Input NAND Gate | Intersil-Corporation | - | - | - | - | 112 K |
BTS100 | Smart highside power switch TEMPFET | Infineon-formely-Siemens | - | 3 | -55°C | 150°C | 301 K |
HCTS109T | Radiation Hardened Dual JK Flip Flop | Intersil-Corporation | - | - | - | - | 121 K |
HCTS10MS | Radiation Hardened Triple 3-Input NAND Gate | Intersil-Corporation | - | - | - | - | 147 K |
HCTS10MS | Radiation Hardened Triple 3-Input NAND Gate | Intersil-Corporation | - | - | - | - | 147 K |
MCM6323ATS10 | 64K X 16 bit 3,3V asynchronous fast static RAM | Motorola | TSOP | 44 | 0°C | 70°C | 181 K |
MCM6323ATS10R | 64K X 16 bit 3,3V asynchronous fast static RAM | Motorola | TSOP | 44 | 0°C | 70°C | 181 K |
MCM6946TS10 | 516K x 8 bit fast static random access memory | Motorola | TSOP | 44 | 0°C | 70°C | 172 K |
MCM6946TS10R | 516K x 8 bit fast static random access memory | Motorola | TSOP | 44 | 0°C | 70°C | 172 K |
STS10NF30L | N-CHANNEL 30V - 0.011 OHM - 10A SO-8 STRIPFET POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 44 K |
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