| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTW10N100E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 192 K |
| STW10NB60 | N-CHANNEL 600V - 0.69 OHM - 10A - TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 93 K |
| STW10NC60 | N-CHANNEL 6OOV - 0.65 OHM - 10A - TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 57 K |
| STW10NC70Z | N-CHANNEL 700V 0.58OHM 10.6A TO-247 ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 249 K |
| STW10NK60Z | N-CHANNEL 600V - 0.65 OHM - 10A TO-220/TO-220FP/D2PAK/I2PAK/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 684 K |
| STW10NK80Z | N-CHANNEL 800V - 0.78 OHM - 9A TO-220/TO-220FP/TO-247 ZENER-PROTECTED SUPERMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 458 K |
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