| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTW7N80E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 220 K |
| STW7NA100 | N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 76 K |
| STW7NA80 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 122 K |
| STW7NA90 | N-CHANNEL 900V - 1.05 OHM - 7A - TO-247/ISOWATT218 FAST POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 111 K |
| STW7NB80 | N-CHANNEL 800V - 1.6 OHM - 6.5A - TO-247 POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 88 K |
| STW7NC80Z | N-CHANNEL 800V 1.5OHM 6A TO-247 ZENER-PROTECTED POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 248 K |
| STW7NC90Z | N-CHANNEL 900V 1.55 OHM 6A TO-247 ZENER-PROTECTED POWERMESH III MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 243 K |
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