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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CM100BU-12H100 Amp IGBT module for high power switching use insolated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C47 K
CM100E3U-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C150°C50 K
CM100TU-12H100 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-15-40°C150°C56 K
CM150E3U-12H150 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C150°C50 K
CM150TU-12H150 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-15-40°C150°C51 K
CM200TU-12H200 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-15-40°C150°C51 K
CM400DU-12H400 Amp IGBT module for high power switching use insolated typeMitsubishi-Electric-Corporation-Semiconductor-Group-7-40°C150°C43 K
CM75BU-12H75 Amp IGBT module for high power switching use insolated typeMitsubishi-Electric-Corporation-Semiconductor-Group-4-40°C150°C48 K
CM75E3U-12H75 Amp IGBT module for high power switching use insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-3-40°C150°C51 K
CM75TU-12H75 Amp IGBT module for high power switching use insolated typeMitsubishi-Electric-Corporation-Semiconductor-Group-18-40°C150°C56 K
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