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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
uPD45128163G5-A10-9JF128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 10ns, 3.3VdistributorTSOP II540°C70°C682 K
uPD45128163G5-A75L-9JF128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 7.5ns, 3.3V, low powerdistributorTSOP II540°C70°C682 K
uPD45128163G5-A80L-9JF128M-bit synchronous DRAM, organization 2M x 16 x 4, LVTTL, 8ns, 3.3V, low powerdistributorTSOP II540°C70°C682 K
uPD45128441G5-A75L-9JF128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 7.5ns, 3.3V, low powerdistributorTSOP II540°C70°C682 K
uPD45128441G5-A80L-9JF128M-bit synchronous DRAM, organization 8M x 4 x 4, LVTTL, 8ns, 3.3V, low powerdistributorTSOP II540°C70°C682 K
uPD45128841G5-A75L-9JF128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 7.5ns, 3.3V, low powerdistributorTSOP II540°C70°C682 K
uPD45128841G5-A80L-9JF128M-bit synchronous DRAM, organization 4M x 8 x 4, LVTTL, 8ns, 3.3V, low powerdistributorTSOP II540°C70°C682 K
UPD45D128442G5-C80-9LG128M-bit(8M-word x 4-bit x 4-bank)DDR SDRAMNEC-Electronics-Inc-----250 K
UPD45D128842G5-C75-9LG128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMNEC-Electronics-Inc-----250 K
UPD45D128842G5-C80-9LG128M-bit(4M-word x 8-bit x 4-bank)DDR SDRAMNEC-Electronics-Inc-----250 K
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