Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IDT72V01L25J | 3.3V volt CMOS asynchronous FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9 | Integrated-Device-Technology-Inc- | PLCC | 32 | 0°C | 70°C | 133 K |
IDT72V01L35J | 3.3V volt CMOS asynchronous FIFO 512 x 9, 1024 x 9, 2048 x 9, 4096 x 9 | Integrated-Device-Technology-Inc- | PLCC | 32 | 0°C | 70°C | 133 K |
MBM29LV016T-12PTN | CMOS 16M (2M x 8) bit | Fujitsu-Microelectronis | - | 40 | -40°C | 85°C | 600 K |
MBM29LV016T-80PTN | CMOS 16M (2M x 8) bit | Fujitsu-Microelectronis | - | 40 | -20°C | 70°C | 600 K |
MBM29LV016T-90PTN | CMOS 16M (2M x 8) bit | Fujitsu-Microelectronis | - | 40 | -40°C | 85°C | 600 K |
NM27LV010V250 | 1,048,576-Bit (128k x 8) Low Voltage EPROM [Life-time buy] | Fairchild-Semiconductor | PLCC | 32 | - | - | 100 K |
TVV010 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 4 | -65°C | 200°C | 17 K |
TVV014 | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
TVV014A | NPN silicon RF power transistor | Advanced-Semiconductor-Inc- | - | 6 | -65°C | 200°C | 17 K |
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