| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| AV101-12 | HIP3 variable attenuator 0.8-1 GHz | distributor | SOIC | 8 | -40°C | 85°C | 814 K |
| BS616LV1010AC | 70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit | distributor | BGA | 44 | 0°C | 70°C | 216 K |
| BS616LV1010AI | 70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit | distributor | BGA | 44 | 0°C | 85°C | 216 K |
| BS616LV1010EC | 70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit | distributor | TSOP | 44 | 0°C | 70°C | 216 K |
| BS616LV1010EI | 70ns 2.4-5.5V ultra low power/voltage CMOS SRAM 64K x 16bit | distributor | TSOP | 44 | 0°C | 85°C | 216 K |
| BS616UV1010EC | 150ns 15-10mA 1.8-2.6V ultra low power/voltage CMOS SRAM 64K x 16bit | distributor | TSOP | 44 | 0°C | 70°C | 216 K |
| HV101DB1 | 10-72V hotswap controller | distributor | - | 3 | - | - | 443 K |
| HV101X | 14V inrush current limiter controller | distributor | Die | 3 | -40°C | 85°C | 83 K |
| RBV1010 | 1000 V, 10 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 19 K |
| RBV1010D | 1000 V, 10 A, silicon bridge rectifier | distributor | RBV25 | 4 | -40°C | 150°C | 41 K |
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