Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IDT71V42815Y | 3.3V CMOS static RAM 4 meg (1K x 4-bit) | Integrated-Device-Technology-Inc- | SOJ | 32 | 0°C | 70°C | 19 K |
IDT71V42820Y | 3.3V CMOS static RAM 4 meg (1K x 4-bit) | Integrated-Device-Technology-Inc- | SOJ | 32 | 0°C | 70°C | 19 K |
LH6V4256D-10 | CMOS 1M(256K x 4) dynamic RAM | Sharp | DIP | 20 | 0°C | 70°C | 198 K |
LH6V4256K-10 | CMOS 1M(256K x 4) dynamic RAM | Sharp | SOJ | 26 | 0°C | 70°C | 198 K |
LH6V4256T-10 | CMOS 1M(256K x 4) dynamic RAM | Sharp | TSOP | 28 | 0°C | 70°C | 198 K |
M5M4V4265CJ-5 | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 40 | -20°C | 85°C | 311 K |
M5M4V4265CJ-6 | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 40 | -20°C | 85°C | 311 K |
M5M4V4265CJ-6S | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 40 | -20°C | 85°C | 311 K |
M5M4V4265CJ-7 | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 40 | -20°C | 85°C | 311 K |
M5M4V4265CJ-7S | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 40 | -20°C | 85°C | 311 K |
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