Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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VTP8350 | Process photodiode. Isc = 80 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K. | distributor | Ceramic | 2 | -20°C | 75°C | 26 K |
VTP8440 | Process photodiode. Isc = 55 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K. | distributor | Ceramic | 2 | -20°C | 75°C | 26 K |
VTP8551 | Process photodiode. Isc = 70 microA(typ), Voc = 350 mV at H = 100 fc, 2850 K. | distributor | Mini DIP | 2 | -40°C | 85°C | 26 K |
VTP8651 | Process photodiode. Isc = 55 microA(typ), Voc = 300 mV at H = 100 fc, 2850 K. | distributor | Mini DIP | 2 | -40°C | 85°C | 26 K |
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