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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
BAW101Dual, isolated high voltage switching diodedistributorSOT4-65°C150°C152 K
MTW10N100ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C192 K
PAW102440-860 MHz,CATV ultra linear amplifierM-A-COM---manufacturer-of-RF-9--36 K
PAW10265-200 MHz,CATV ultra linear amplifierM-A-COM---manufacturer-of-RF-9--36 K
PAW102735-550 MHz,CATV ultra linear amplifierM-A-COM---manufacturer-of-RF-9--35 K
UT62W1024PC-35LAccess time: 35 ns, 128 K x 8 Bit wide range low power CMOS SRAMdistributorPDIP320°C70°C230 K
UT62W1024PC-35LLAccess time: 35 ns, 128 K x 8 Bit wide range low power CMOS SRAMdistributorPDIP320°C70°C230 K
W10LSingle-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified output current 1.5A at Ta=50degC.distributor-4-55°C125°C20 K
W10M1.5 mA single-phase silicon bridge rectifierdistributorWOM4-55°C125°C374 K
W10MSingle-phase glass passivated silicon bridge rectifier. Max recurrent peak reverse voltage 1000V, max RMS bridge input voltage 700V, max DC blocking voltage 1000V. Max average forward rectified output current 1.5A at Ta=25degC.distributorWOM4-55°C125°C20 K
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