Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BA44W12SAT | Dual output voltage regulator with power saving | ROHM | - | 5 | -40°C | 85°C | 109 K |
MGW12N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 136 K |
MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 168 K |
STGW12NB60H | N-CHANNEL 12A - 600V TO-247 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
STGW12NB60HD | N-CHANNEL 12A - 600V TO-247 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 90 K |
STW12NA50 | N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR | SGS-Thomson-Microelectronics | - | - | - | - | 147 K |
STW12NA60 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 243 K |
STW12NC60 | N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
TMX320VC5410GGW120 | DIGITAL SIGNAL PROCESSOR | Texas-Instruments | GGW | 176 | - | - | 1 M |
Z02W12V | 12V zener diode for constant voltage regulation applications and reference voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 236 K |
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