| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 15KW130A | 130.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
| 20KW132 | 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
| 20KW132A | 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
| 30KW132 | 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 166 K |
| 30KW132A | 132.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications | distributor | - | 2 | -55°C | 175°C | 166 K |
| BUW13AF | 1000 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 85 K |
| BUW13AF | 1000 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 85 K |
| BUW13AW | 1000 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 79 K |
| BUW13W | 850 V, silicon diffused power transistor | Philips-Semiconductors | SOT | 3 | - | - | 79 K |
| HCNW139 | Low input current, high gain optocoupler, single channel | distributor | Widebody | 8 | -40°C | 85°C | 259 K |
| [1] [2] 3 [4] [5] [6] |
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