| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 15KW180 | 180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
| 15KW180A | 180.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
| 15KW18A | 18.00V; 50mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
| 20KW180 | 180.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
| GS8170LW18C-250 | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW18C-250I | 250MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
| GS8170LW18C-300 | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW18C-300I | 300MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
| GS8170LW18C-333 | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | 0°C | 70°C | 877 K |
| GS8170LW18C-333I | 333MHz 1M x 18 18MB double late write sigmaRAM SRAM | distributor | BGA | 209 | -40°C | 85°C | 877 K |
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