| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| FW202 | N-channel silicon MOSFET, ultrahigh-speed switching application | SANYO-Electric-Co--Ltd- | SOP8 | 8 | - | - | 53 K |
| M27W201 | 2 MBIT (256KB X8) LOW VOLTAGE OTP EPROM | SGS-Thomson-Microelectronics | - | - | - | - | 103 K |
| M27W202 | 2 MBIT (128KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM | SGS-Thomson-Microelectronics | - | - | - | - | 103 K |
| M29W200BB | 2 MBIT (256KB X8 OR 128KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY | SGS-Thomson-Microelectronics | - | - | - | - | 144 K |
| M29W200BT | 2 MBIT (256KB X8 OR 128KB X16, BOOT BLOCK) LOW VOLTAGE SINGLE SUPPLY FLASH MEMORY | SGS-Thomson-Microelectronics | - | - | - | - | 144 K |
| MGW20N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 139 K |
| STGW20NB60H | N-CHANNEL 20A - 600V TO-247 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 85 K |
| STGW20NB60HD | N-CHANNEL 20A - 600V TO-247 POWERMESH IGBT | SGS-Thomson-Microelectronics | - | - | - | - | 90 K |
| STW20NA50 | N-CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTORS | SGS-Thomson-Microelectronics | - | - | - | - | 148 K |
| STW20NB50 | N-CHANNEL ENHANCEMENT MODE VERY LOW GATE CHARGE POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 86 K |
| 1 [2] [3] [4] [5] [6] [7] |
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