| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BPW20R | Photo Darlington transistor for optical sensors with high sensitivity | Vishay-Telefunken | TO 5 | - | - | - | 78 K |
| FW203 | N-channel silicon MOSFET, ultrahigh-speed switching application | SANYO-Electric-Co--Ltd- | SOP8 | 8 | - | - | 55 K |
| GP2W2001YK | IrDA control infrared transceiver | Sharp | Epoxy resin | 10 | -10°C | 70°C | 77 K |
| GP2W2002YK | IrDA control infrared transceiver | Sharp | Epoxy resin | 10 | -10°C | 70°C | 79 K |
| MGW20N120 | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 231 K |
| MGW20N60D | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 246 K |
| MRW2001 | Microwave power transistor | Motorola | GP | 3 | - | - | 102 K |
| MTW20N50E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 193 K |
| RQ5RW20AA-TR | Voltage regulator IC. Output voltage 2.0V. L active type. Taping type TR | distributor | - | 4 | -40°C | 85°C | 173 K |
| Z02W20V | 20V zener diode for constant voltage regulation applications and reference voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 236 K |
| [1] 2 [3] [4] [5] [6] [7] |
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