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W216

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
20KW216216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressordistributor-2-55°C175°C166 K
20KW216A216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressordistributor-2-55°C175°C166 K
30KW216216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applicationsdistributor-2-55°C175°C166 K
30KW216A216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applicationsdistributor-2-55°C175°C166 K
AQW216APhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tube packing style.distributorDIP8-40°C85°C46 K
AQW216AXPhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 600 V, load current 40 mA. Surface-mount terminal. Tape and reel packing style.distributorDIP8-40°C85°C46 K
AQW216AZPhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 60 V, load current 40 mA. Surface-mount terminal. Tape and reel packing style.distributorDIP8-40°C85°C46 K
M36W216B16 MBIT (1MB X16, BOOT BLOCK) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCTSGS-Thomson-Microelectronics----434 K
M36W216T16 MBIT (1MB X16, BOOT BLOCK) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCTSGS-Thomson-Microelectronics----434 K
W216HSpread Spectrum FTG for 440BX and VIA Apollo Pro-133Cypress-Semiconductor----154 K
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