Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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BDW23A | General purpose NPN Darlington transistor | Power-Innovations | - | - | - | - | 150 K |
BDW23B | General purpose NPN Darlington transistor | Power-Innovations | - | - | - | - | 150 K |
BDW23C | General purpose NPN Darlington transistor | Power-Innovations | - | - | - | - | 150 K |
MB90W234ZFV | 16-bit proprietary microcontroller | Fujitsu-Microelectronis | ceramic SQFP | 100 | -40°C | 70°C | 1 M |
MTW23N25E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 152 K |
NJW2303F | Base band interface IC | New-Japan-Radio-Co--Ltd--JRC | QFP | 32 | -20°C | 75°C | 195 K |
RQ5RW23AA-TR | Voltage regulator IC. Output voltage 2.3V. L active type. Taping type TR | distributor | - | 4 | -40°C | 85°C | 173 K |
RQ5RW23AB | Voltage regulator IC. Output voltage 2.3V. L active type. Antistatic bag (for sample only) | distributor | - | 4 | -40°C | 85°C | 173 K |
RQ5RW23BA-TR | Voltage regulator IC. Output voltage 2.3V. H active type. Taping type TR | distributor | - | 4 | -40°C | 85°C | 173 K |
RQ5RW23BB | Voltage regulator IC. Output voltage 2.3V. H active type. Antistatic bag (for sample only) | distributor | - | 4 | -40°C | 85°C | 173 K |
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