Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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20KW232 | 232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
20KW232A | 232.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor | distributor | - | 2 | -55°C | 175°C | 166 K |
BDW23A | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 38 K |
BDW23B | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 38 K |
FW231 | N-Channel Silicon MOSFET Load Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 165 K |
FW232 | N-Channel Silicon MOSFET Load Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 30 K |
FW233 | N-Channel Silicon MOSFET Load Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 43 K |
FW236 | N-Channel Silicon MOSFET Load Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 42 K |
FW238 | N-Channel Silicon MOSFET Load Switching Applications | SANYO-Electric-Co--Ltd- | - | - | - | - | 28 K |
SGW23N60UFD | Ultra-Fast IGBT | Fairchild-Semiconductor | - | - | - | - | 586 K |
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