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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
AQW254AXPhotoMOS relay, HE (high-function economy) type, [2-channel (form A) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tape and reel packing style, picked from the 1/2/3/4-pin side.distributorDIP8-40°C85°C44 K
AQW254AZPhotoMOS relay, HE (high-function economy) type, [2-channel (form A) type]. AC/DC type. Output rating: load voltage 400 V, load current 120 mA. Surface-mount terminal, tape and reel packing style, picked from the 5/6/7/8-pin side.distributorDIP8-40°C85°C44 K
FDW2506PDual P-Channel 2.5V Specified PowerTrench MOSFETFairchild-Semiconductor----93 K
FDW2507NDual N-Channel 2.5V specified PowerTrench MOSFETFairchild-Semiconductor----129 K
LC35W256EM256K (32K words x 8 bits) SRAM Control pins: NOT OE and NOT CESANYO-Electric-Co--Ltd-----46 K
LC35W256ET256K (32K words x 8 bits) SRAM Control pins: NOT OE and NOT CESANYO-Electric-Co--Ltd-----46 K
W25P222AD-464K x 32 burst pipelined high-speed CMOS static RAM, LVTTL, 4nsWinbond-ElectronicsTQFP1000°C70°C1 M
W25P222AD-4A64K x 32 burst pipelined high-speed CMOS static RAM, LVTTL, 4.5nsWinbond-ElectronicsTQFP1000°C70°C1 M
W25P222AF-464K x 32 burst pipelined high-speed CMOS static RAM, LVTTL, 4nsWinbond-ElectronicsQFP1000°C70°C1 M
W25P222AF-4A64K x 32 burst pipelined high-speed CMOS static RAM, LVTTL, 4.5nsWinbond-ElectronicsQFP1000°C70°C1 M
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