| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTW35N15E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 169 K |
| PHW35NQ20T | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT429 | - | - | - | 93 K |
| PHW35NQ20T | N-channel TrenchMOS transistor | Philips-Semiconductors | SOT429 | - | - | - | 93 K |
| STK11C88-W35I | 32K x 8 nvSRAM CMOS nonvolatile static RAM | distributor | DIP | 28 | -40°C | 85°C | 90 K |
| STK12C68-W35I | 8K x 8 autostore nvRAM CMOS nonvolatile static RAM | distributor | DIP | 28 | -40°C | 85°C | 125 K |
| STK14C88-W35I | 32K x 8 autostore nvRAM quantum trap CMOS nonvolatile static RAM | distributor | DIP | 32 | -40°C | 85°C | 123 K |
| STK15C68-W35I | 8K x 8 autostore nvRAM high performance CMOS nonvolatile static RAM | distributor | DIP | 28 | -40°C | 85°C | 76 K |
| STK15C88-W35I | 32K x 8 autostore nvRAM high performance CMOS nonvolatile static RAM | distributor | DIP | 28 | -40°C | 85°C | 75 K |
| STK16C68-W35I | 8K x 8 autostore plus nvRAM quantum trap CMOS nonvolatile static RAM | distributor | DIP | 28 | -40°C | 85°C | 95 K |
| STK16C88-W35I | 32K x 8 autostore plus nvRAM quantum trap CMOS nonvolatile static RAM | distributor | DIP | 28 | -40°C | 85°C | 95 K |
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