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W4NRD8C

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
W4NRD8C-U000Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride depositiondistributor----279 K
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